中红外波段硅的非线性吸收

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-09-13 DOI:10.1109/GROUP4.2006.1708195

V. Raghunathan, R. Shori, O. Stafsudd, B. Jalali

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引用次数: 2

摘要

我们报告了中红外波长非线性吸收的测量。在双光子带之外没有非线性损耗，加上高拉曼增益，导热性和损伤阈值，使硅成为一种优秀的中红外拉曼晶体。

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Nonlinear absorption in silicon at mid infrared wavelengths

We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.

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3rd IEEE International Conference on Group IV Photonics, 2006.

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