高度集成的3-D MMIC技术被应用于新型晶片GaAs和Si-MMIC

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567833

T. Tokumitsu, M. Hirano, K. Yamasaki, C. Yamaguchi, M. Aikawa

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引用次数: 12

摘要

采用高集成的17-24 GHz GaAs单芯片接收器和7-10 GHz Si无功阻抗匹配放大器，描述了一种采用三维MMIC结构的新型主片MMIC设计方法，这是我们最新制造的器件。这种方法大大降低了TAT和制造成本。

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Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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