并联igbt的静态和动态特性

Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting Pub Date : 1990-10-07 DOI:10.1109/IAS.1990.152401

R. Letor

{"title":"并联igbt的静态和动态特性","authors":"R. Letor","doi":"10.1109/IAS.1990.152401","DOIUrl":null,"url":null,"abstract":"The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<<ETX>>","PeriodicalId":185839,"journal":{"name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Static and dynamic behaviour of paralleled IGBTs\",\"authors\":\"R. Letor\",\"doi\":\"10.1109/IAS.1990.152401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<<ETX>>\",\"PeriodicalId\":185839,\"journal\":{\"name\":\"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1990.152401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1990.152401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

分析了并联绝缘栅双极晶体管(igbt)的电流平衡、热稳定性和开关行为特性。描述了散热器安装、布局和驱动电路的影响，以演示并联igbt以获得最佳性能的最佳方法。讨论了两个并联igbt在完全绝缘封装中的例子。

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Static and dynamic behaviour of paralleled IGBTs

The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<>

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Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting

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