低压开关电容电路中自举开关可靠性的改进

Shun Yao, Xiaobo Wu, Xiaolang Yan
{"title":"低压开关电容电路中自举开关可靠性的改进","authors":"Shun Yao, Xiaobo Wu, Xiaolang Yan","doi":"10.1109/EDSSC.2005.1635304","DOIUrl":null,"url":null,"abstract":"One of the possible solutions to the low voltage applications of modern integrated circuit, which was widely demanded by recently developed submicron CMOS technology, is the bootstrapped switch technique. In order to overcome its drawbacks such like the reliability issue on the main signal switch during the clock transition, three different approaches were proposed in this paper along with the simulation results. The oxide lifetime can benefit from these modifications without much circuit degradation.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Modifications for Reliability of Bootstrapped Switches in Low Voltage Switched-Capacitor Circuits\",\"authors\":\"Shun Yao, Xiaobo Wu, Xiaolang Yan\",\"doi\":\"10.1109/EDSSC.2005.1635304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One of the possible solutions to the low voltage applications of modern integrated circuit, which was widely demanded by recently developed submicron CMOS technology, is the bootstrapped switch technique. In order to overcome its drawbacks such like the reliability issue on the main signal switch during the clock transition, three different approaches were proposed in this paper along with the simulation results. The oxide lifetime can benefit from these modifications without much circuit degradation.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

自启动开关技术是解决现代集成电路低电压应用的可能方法之一,这是近年来发展的亚微米CMOS技术所广泛要求的。为了克服时钟转换过程中主信号切换的可靠性问题,本文提出了三种不同的方法,并给出了仿真结果。氧化物的寿命可以从这些修改中受益,而不会有太多的电路退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modifications for Reliability of Bootstrapped Switches in Low Voltage Switched-Capacitor Circuits
One of the possible solutions to the low voltage applications of modern integrated circuit, which was widely demanded by recently developed submicron CMOS technology, is the bootstrapped switch technique. In order to overcome its drawbacks such like the reliability issue on the main signal switch during the clock transition, three different approaches were proposed in this paper along with the simulation results. The oxide lifetime can benefit from these modifications without much circuit degradation.
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