F. D. King, P. Winson, A. Snider, L. Dunleavy, D. Levinson
{"title":"MESFET参数提取过程中产生的条件数","authors":"F. D. King, P. Winson, A. Snider, L. Dunleavy, D. Levinson","doi":"10.1109/SECON.1996.510095","DOIUrl":null,"url":null,"abstract":"Conditions numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity.","PeriodicalId":338029,"journal":{"name":"Proceedings of SOUTHEASTCON '96","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The condition numbers arising in MESFET parameter extraction\",\"authors\":\"F. D. King, P. Winson, A. Snider, L. Dunleavy, D. Levinson\",\"doi\":\"10.1109/SECON.1996.510095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conditions numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity.\",\"PeriodicalId\":338029,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '96\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1996.510095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1996.510095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The condition numbers arising in MESFET parameter extraction
Conditions numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity.