局部真空封装硅场发射极阵列的制备

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1116/1.1851533

D. Noda, M. Hatakeyama, M. Kyogoku, K. Ikushima, K. Sawada, M. Ishida

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引用次数: 7

摘要

在硅衬底上制备了硅场发射极阵列局部真空封装。为了保持电子发射压力，将蒸发型钛吸收剂与局部真空封装的Si场发射极阵列制成桥接结构。局部真空封装技术适用于片上器件的集成电路工艺。因此，该技术对于许多具有高性能的应用程序非常有用。

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Fabrication of Si field emitter array in local vacuum package

We have fabricated the local vacuum package with Si field emitter array on Si substrate. To keep the pressure for electron emission, the titanium getter of evaporation type was made a bridge structure with Si field emitter array in local vacuum package. The local vacuum package technique adapted to the IC process for on-chip device. Therefore, this technique is very useful for many applications with high performance.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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