Ambipolar double-gate FETs for the design of compact logic structures

We present in this paper a circuit design approach to achieve compact logic circuits with ambipolar double-gate devices, using the in-field controllability of such devices. The approach is demonstrated for complementary static logic design style. We apply this approach in a case study focused on Double Gate Carbon Nanotube FET (DG-CNTFET) technology and show that, with respect to conventional CMOS-like static logic structures and for comparable power consumption, time delay and integration density can both be improved by a factor of 1.5x and 2x, respectively. Compared with a predictive model for 16nm CMOS technology, the gates built according to the design approach described in this work and based on DG-CNTFET offer a gain of 30% concerning Power-Delay-Product (PDP).