用于模拟/混合信号/射频电路应用的最先进的NMOS和SiGe HBT器件的比较

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345492

K. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorn, I. Young

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引用次数: 64

摘要

采用90nm衍生通信工艺技术的RF CMOS性能与SiGe BJT性能进行了比较。NMOS在f/sub T//f/sub max/ = 209/248 GHz (70nm)和f/sub T//f/sub max/ = 166/277 GHz (80nm)时的性能，以及f/sub min/在0.3 dB (2GHz)和0.6 dB (10GHz)时的性能表明，在集成通信过程中没有主要理由实现SiGe HBTs BiCMOS。

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A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at f/sub T//f/sub max/ = 209/248 GHz (70nm) and f/sub T//f/sub max/ = 166/277 GHz (80nm) with F/sub min/ at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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