基于两个MIM电容器阻抗差的薄膜介质表征方法分析

2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI:10.23919/EUMIC.2017.8230666

A. Niembro-Martin, D. Mercier, H. Sibuet, B. Dieppedale, C. Baret, C. Bonnard, C. Billard, P. Gardes, P. Poveda

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引用次数: 1

摘要

本文分析了一种基于两个圆形电容器阻抗差的薄膜介电特性表征方法。为了确定使用该方法的最佳情况，第一次对错误进行了详细的研究。为了说明该研究，该方法已应用于两种具有极端不同RF特性的介电体:氮化硅(低介电常数和低损耗切线)和锆钛酸钡钙(非常高介电常数和高损耗切线)。

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Analysis of a thin film dielectric characterization method based on the impedance difference of two MIM capacitors

This paper presents an analysis of a thin film dielectric characterization method based on the impedance difference of two circular capacitors. For the first time, an error study is detailed in order to define what the best case to use the method is. To illustrate the study, the method has been applied for two dielectrics with extremely different RF properties: silicon nitride (low permittivity and low loss tangent) and Barium Calcium Zirconate Titanate (very high permittivity and high loss tangent).

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2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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