C. Guo, E. Ngoya, R. Quéré, M. Camiade, J. Obregon
{"title":"具有和不具有反馈的最优CAD mesfet倍频器","authors":"C. Guo, E. Ngoya, R. Quéré, M. Camiade, J. Obregon","doi":"10.1109/MWSYM.1988.22226","DOIUrl":null,"url":null,"abstract":"A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Optimal CAD MESFETs frequency multipliers with and without feedback\",\"authors\":\"C. Guo, E. Ngoya, R. Quéré, M. Camiade, J. Obregon\",\"doi\":\"10.1109/MWSYM.1988.22226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimal CAD MESFETs frequency multipliers with and without feedback
A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<>
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