功率门控功能单元损益平衡时间的片上检测方法

K. Usami, Yuya Goto, Kensaku Matsunaga, S. Koyama, D. Ikebuchi, H. Amano, Hiroshi Nakamura
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引用次数: 21

摘要

在功率门功能单元的细粒度漏电节约技术中,效率对电源开关开/关时的开销能量耗散很敏感。为了获得节能收益,断电时间必须长于所需的最小时间,即盈亏平衡时间(BET)。虽然已有文献描述了BET感知功率门控控制的有效性,但如何实际检测随温度和工艺变化而波动的BET尚未见报道。本文提出了一种基于MTCMOS电路结构的pMOS/nMOS漏电监测器的片上检测方法。我们将这种方法应用于泄漏监视器和CPU,其中包括65nm CMOS技术实现的功率门控乘法器。结果表明,我们的方法检测到的BET与传统的基于模拟的离线技术相比有5%-17%的差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-chip detection methodology for break-even time of power gated function units
In a fine-grain leakage saving technique to power gate function units, the efficiency is sensitive to overhead energy dissipating at turning on/off power switches. To get gain in energy savings, the powered-off period has to be longer than the minimum required time i.e. the break-even time (BET). While effectiveness of BET-aware power-gating control has been described in literatures, how to actually detect BET that fluctuates with the temperature and process variation has not been reported so far. This paper proposes an on-chip detection methodology for BET using pMOS/nMOS leakage monitors with MTCMOS circuit structure. We applied this methodology to the leakage monitors and a CPU including a power-gated multiplier implemented in 65nm CMOS technology. Results showed that our methodology detects BET at 5%–17% difference from that of the conventional simulation-based off-line technique.
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