Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Dee, D. Choi, Hansuek Lee
{"title":"基于无直接蚀刻工艺的1100万q片上硫化物谐振器的布里渊激光器","authors":"Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Dee, D. Choi, Hansuek Lee","doi":"10.1109/OMN.2019.8925242","DOIUrl":null,"url":null,"abstract":"We have experimentally demonstrated on-chip chalcogenide resonators with Q-factor of 1.1x107 using a new fabrication method which avoids direct etching of chalcogenide film. Low threshold power (12mW) Brillouin laser is implemented using the fabrication method. Also, cascaded lasing up to 3rd stokes have been observed with 42 mW of pump power.","PeriodicalId":353010,"journal":{"name":"2019 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Brillouin Lasers Based On 11 Million-Q On-Chip Chalcogenide Resonators Without Direct Etch Process\",\"authors\":\"Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Dee, D. Choi, Hansuek Lee\",\"doi\":\"10.1109/OMN.2019.8925242\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have experimentally demonstrated on-chip chalcogenide resonators with Q-factor of 1.1x107 using a new fabrication method which avoids direct etching of chalcogenide film. Low threshold power (12mW) Brillouin laser is implemented using the fabrication method. Also, cascaded lasing up to 3rd stokes have been observed with 42 mW of pump power.\",\"PeriodicalId\":353010,\"journal\":{\"name\":\"2019 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2019.8925242\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2019.8925242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Brillouin Lasers Based On 11 Million-Q On-Chip Chalcogenide Resonators Without Direct Etch Process
We have experimentally demonstrated on-chip chalcogenide resonators with Q-factor of 1.1x107 using a new fabrication method which avoids direct etching of chalcogenide film. Low threshold power (12mW) Brillouin laser is implemented using the fabrication method. Also, cascaded lasing up to 3rd stokes have been observed with 42 mW of pump power.
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