{"title":"一个4 A峰值电流和2 ns脉冲宽度CMOS激光二极管驱动器用于高测量速率的应用","authors":"J. Nissinen, J. Kostamovaara","doi":"10.1109/ESSCIRC.2013.6649146","DOIUrl":null,"url":null,"abstract":"A single chip integrated laser diode driver has been designed and fabricated in a high-voltage 0.35μm 50V CMOS technology for pulsed time-of-flight (TOF) laser ranging applications. A peak current and pulse width of approximately 4 A and 2ns, respectively, can be achieved through a low ohmic load in a driver structure with four parallel switching devices. With a commercial pulsed laser diode a peak optical power of 2.3 W with a pulse width of 1.5 ns was measured. Measurements showed also that a pulsing rate of at least 1 MHz is achievable. With this pulse rate the current consumption from 5.5 V and 50 V supplies is 9 mA and 5 mA, respectively.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"499 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 4 a peak current and 2 ns pulse width CMOS laser diode driver for high measurement rate applications\",\"authors\":\"J. Nissinen, J. Kostamovaara\",\"doi\":\"10.1109/ESSCIRC.2013.6649146\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single chip integrated laser diode driver has been designed and fabricated in a high-voltage 0.35μm 50V CMOS technology for pulsed time-of-flight (TOF) laser ranging applications. A peak current and pulse width of approximately 4 A and 2ns, respectively, can be achieved through a low ohmic load in a driver structure with four parallel switching devices. With a commercial pulsed laser diode a peak optical power of 2.3 W with a pulse width of 1.5 ns was measured. Measurements showed also that a pulsing rate of at least 1 MHz is achievable. With this pulse rate the current consumption from 5.5 V and 50 V supplies is 9 mA and 5 mA, respectively.\",\"PeriodicalId\":183620,\"journal\":{\"name\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"499 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2013.6649146\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4 a peak current and 2 ns pulse width CMOS laser diode driver for high measurement rate applications
A single chip integrated laser diode driver has been designed and fabricated in a high-voltage 0.35μm 50V CMOS technology for pulsed time-of-flight (TOF) laser ranging applications. A peak current and pulse width of approximately 4 A and 2ns, respectively, can be achieved through a low ohmic load in a driver structure with four parallel switching devices. With a commercial pulsed laser diode a peak optical power of 2.3 W with a pulse width of 1.5 ns was measured. Measurements showed also that a pulsing rate of at least 1 MHz is achievable. With this pulse rate the current consumption from 5.5 V and 50 V supplies is 9 mA and 5 mA, respectively.
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