碳化硅的阶梯外延生长及其电导率控制

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785122

H. Matsunami, T. Kimoto

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引用次数: 1

摘要

通过利用非取向SiC(0001)衬底上的阶梯流生长，实现了SiC的多型控制外延生长。通过光致发光、霍尔效应和深层次分析，阐明了SiC涂层的质量。未掺杂脱毛膜的背景掺杂水平可降至0.5/spl / sim/2/spl倍/10/sup / 14/ cm/sup -3/。在10/sup 15/ ~ 10/sup 19/cm/sup -3/范围内实现了n型和p型杂质的原位掺杂。在氮给体和铝/硼受体离子注入中，高温退火是获得近乎完美电活化的关键。钒离子注入可以成功地形成半绝缘的SiC层。

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Step-controlled epitaxial growth of SiC and its conductivity control

Polytype-controlled epitaxial growth of SiC is achieved by utilizing step-flow growth on off-oriented SiC(0001) substrates. High-quality of SiC epilayers has been elucidated through photoluminescence, Hall effect, and deep level analyses. The background doping level of undoped epilayers can be reduced down to 0.5/spl sim/2/spl times/10/sup 14/ cm/sup -3/. In-situ n- and p-type impurity doping from the 10/sup 15/ to 10/sup 19/cm/sup -3/ range has been realized. In ion implantation of nitrogen donors and aluminum/boron acceptors, high-temperature annealing is a key issue to obtain nearly perfect electrical activation. Vanadium ion implantation can successfully be applied to form semi-insulating SiC layers.

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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