{"title":"亚阈值区域过调效应建模对纳米级CMOS逆变器的影响","authors":"Abedalsalam Bani-Ahmed","doi":"10.1109/INNOVATIONS.2011.5893845","DOIUrl":null,"url":null,"abstract":"Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.","PeriodicalId":173102,"journal":{"name":"2011 International Conference on Innovations in Information Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The impact of modeling the overshooting effect in subthreshold region for Nanoscale CMOS inverter\",\"authors\":\"Abedalsalam Bani-Ahmed\",\"doi\":\"10.1109/INNOVATIONS.2011.5893845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.\",\"PeriodicalId\":173102,\"journal\":{\"name\":\"2011 International Conference on Innovations in Information Technology\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Innovations in Information Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INNOVATIONS.2011.5893845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Innovations in Information Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INNOVATIONS.2011.5893845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of modeling the overshooting effect in subthreshold region for Nanoscale CMOS inverter
Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.
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