ka波段6W级GaN功率组合放大器MMIC设计

2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Pub Date : 2022-08-12 DOI:10.1109/ICMMT55580.2022.10023418

Xin Liu, Xiaoling Zhu, Ziming Zhao, Ruijia Liu

{"title":"ka波段6W级GaN功率组合放大器MMIC设计","authors":"Xin Liu, Xiaoling Zhu, Ziming Zhao, Ruijia Liu","doi":"10.1109/ICMMT55580.2022.10023418","DOIUrl":null,"url":null,"abstract":"A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is $4.3^{*}2.5\\ mm^{2}$.","PeriodicalId":211726,"journal":{"name":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Three-Stage 6W GaN Power Combining Amplifier MMIC Design at Ka-Band\",\"authors\":\"Xin Liu, Xiaoling Zhu, Ziming Zhao, Ruijia Liu\",\"doi\":\"10.1109/ICMMT55580.2022.10023418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is $4.3^{*}2.5\\\\ mm^{2}$.\",\"PeriodicalId\":211726,\"journal\":{\"name\":\"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"125 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT55580.2022.10023418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT55580.2022.10023418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文对一种用于5G n257和n261无线通信的三级6W ka波段功率放大器进行了仿真，其工作带宽为27-31.5 GHz。利用0.15 um氮化镓(GaN)高电子迁移率晶体管(HEMT)技术，该PA模拟在20 V漏极电源电压下实现了超过38 dBm的输出功率和超过24%的连续波(CW)工作功率附加效率。OMN经过精心设计，采用低通LC滤波器和威尔金森功率合成器，可实现高输出功率和宽带。芯片尺寸为$4.3^{*}2.5\ mm^{2}$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Three-Stage 6W GaN Power Combining Amplifier MMIC Design at Ka-Band

A three-stage 6W Ka-band power amplifier, operating over the bandwidth of 27-31.5 GHz for 5G n257 and n261 wireless communication, is simulated in this paper. Utilizing the 0.15-um gallium nitride (GaN) high electron mobility transistor (HEMT) technology, this PA simulations achieved an output power of more than 38 dBm and a power added efficiency of more than 24% in continuous-wave (CW) operation at a drain supply voltage of 20 V. The OMN is designed carefully with a low pass LC filter and Wilkinson power combiner for high output power and broadband. The chip size is $4.3^{*}2.5\ mm^{2}$.

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2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

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