高应变FDSOI pmosfet中定向沟道的比较

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404362

S. Morvan, F. Andrieu, P. Nguyen, J. Hartmann, M. Cassé, C. Tabone, A. Toffoli, F. Allain, W. Schwarzenbach, G. Ghibaudo, B. Nguyen, N. Daval, M. Haond, T. Poiroux, O. Faynot

{"title":"高应变FDSOI pmosfet中定向沟道的比较","authors":"S. Morvan, F. Andrieu, P. Nguyen, J. Hartmann, M. Cassé, C. Tabone, A. Toffoli, F. Allain, W. Schwarzenbach, G. Ghibaudo, B. Nguyen, N. Daval, M. Haond, T. Poiroux, O. Faynot","doi":"10.1109/SOI.2012.6404362","DOIUrl":null,"url":null,"abstract":"We fabricated highly stressed FDSOI pMOSFETs down to 15nm gate length. The impact of different stressors (CESL, raised sources and drains, STI) is studied for different device geometries and channel orientations (<;100>; or <;110>;). We evidence that pMOSFETs along <;110>; are more sensitive to stress: STI degrades narrow devices compared to wide ones whereas compressive CESL (-3GPa) and SiGe S/D improve performances (+133% mobility, +16% ION on 10μm wide devices). This makes the <;110>; orientation the most favorable channel orientation for strained pMOSFETs on planar FDSOI.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs\",\"authors\":\"S. Morvan, F. Andrieu, P. Nguyen, J. Hartmann, M. Cassé, C. Tabone, A. Toffoli, F. Allain, W. Schwarzenbach, G. Ghibaudo, B. Nguyen, N. Daval, M. Haond, T. Poiroux, O. Faynot\",\"doi\":\"10.1109/SOI.2012.6404362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated highly stressed FDSOI pMOSFETs down to 15nm gate length. The impact of different stressors (CESL, raised sources and drains, STI) is studied for different device geometries and channel orientations (<;100>; or <;110>;). We evidence that pMOSFETs along <;110>; are more sensitive to stress: STI degrades narrow devices compared to wide ones whereas compressive CESL (-3GPa) and SiGe S/D improve performances (+133% mobility, +16% ION on 10μm wide devices). This makes the <;110>; orientation the most favorable channel orientation for strained pMOSFETs on planar FDSOI.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们制作了高应力FDSOI pmosfet，栅极长度为15nm。对于不同的器件几何形状和通道方向，研究了不同的应力源(CESL、凸起的源和漏、STI)的影响(;或者,)。我们证明了pmosfet沿着;对应力更敏感:与宽器件相比，STI会降低窄器件的性能，而压缩CESL (-3GPa)和SiGe S/D可以提高性能(在10μm宽器件上+133%的迁移率，+16%的ION)。这使得;取向是平面FDSOI上应变pmosfet最有利的通道取向。

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Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs

We fabricated highly stressed FDSOI pMOSFETs down to 15nm gate length. The impact of different stressors (CESL, raised sources and drains, STI) is studied for different device geometries and channel orientations (<;100>; or <;110>;). We evidence that pMOSFETs along <;110>; are more sensitive to stress: STI degrades narrow devices compared to wide ones whereas compressive CESL (-3GPa) and SiGe S/D improve performances (+133% mobility, +16% ION on 10μm wide devices). This makes the <;110>; orientation the most favorable channel orientation for strained pMOSFETs on planar FDSOI.

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2012 IEEE International SOI Conference (SOI)

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