高连续波功率0.8 /spl mu/m波段无铝有源二极管激光器

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.565113

J. K. Wade, L. Mawst, D. Botez, M. Jansen, F. Fang, R. Nabiev

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引用次数: 0

摘要

100 /spl μ m宽条纹，无铝，无涂层，0.83 /spl μ l μ m二极管激光器在T=20/spl度/C时提供4.7 W的连续波最大输出功率和45%的最大连续波壁塞效率。活性区由一个150 /spl的Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/量子阱组成，被0.4 /spl μ m In/sub 0.5/Ga/sub 0.5/P围合层和1.5 /spl μ l μ m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P包覆层包围。对于1毫米长的器件，我们获得的阈值电流密度低至220 A/cm/sup 2/，阈值电流特征温度T/sub 0/高达160 K。

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High CW power 0.8 /spl mu/m-band Al-free active-region diode lasers

100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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