具有电流饱和能力的双栅MOS控制晶闸管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509465

M. Mehrotra, B. J. Baliga

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引用次数: 4

摘要

介绍了一种结合MCT和IGBT特点的新型功率器件结构。根据施加到其中一个栅极的偏置，双栅MCT表现为IGBT或MCT。实验证明，该器件在MCT模式下具有低导通压降，在IGBT模式下具有良好的FBSOA特性。晶闸管模式的导通电压降为1.5 V，关断时间为15 /spl mu/s。器件以6 /spl mu/s的速度从晶闸管模式过渡到IGBT模式。这些装置的关闭时间没有使用终身杀断技术。

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The dual-gate MOS controlled thyristor with current saturation capability

A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 /spl mu/s. The device transits from the thyristor mode to the IGBT mode in 6 /spl mu/s. No lifetime killing technique was used to control the turn-off time for these devices.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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