新型siret的开关损耗——与其他中等功率器件的比较

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting Pub Date : 1988-10-02 DOI:10.1109/IAS.1988.25122

H. Schmid

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引用次数: 1

摘要

SIRET是一种n-p-n功率晶体管，具有较大的安全工作区域，适用于高达20 kHz及以上的应用。给出了功耗的测量结果，并与其他功率器件的测量结果进行了比较。这些结果是通过热测量得到的，并与计算电压和电流作为时间函数的乘积的结果进行了比较。计算需要对电流探头和前置放大器引入的时间延迟以及不可避免的寄生元件引入的信号畸变进行校正。可开关电流与频率的结果是在四个不同器件的恒定功耗下发现的:一个SIRET，两个igbt(绝缘栅双极晶体管)和一个功率MOSFET。讨论了这些器件最适合的应用领域。

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Switching losses of the new SIRET-a comparison to other medium-power devices

The SIRET is an n-p-n power transistor with a large safe operating area for applications up to 20 kHz and more. Measurements of the power dissipation are presented and compared to measurements on other power devices. The results were obtained by thermal measurements and compared to the results of the calculation of the product of voltage and current as a function of time. The calculation requires the correction for the time delay introduced by the current probe and preamplifier as well as signal distortions introduced by unavoidable parasitic elements. The results of switchable current vs. frequency were found at constant power dissipation on four different devices: a SIRET, two IGBTs (insulated-gate bipolar transistors), and a power MOSFET. The most suitable application areas of these devices are discussed.<>

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Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting

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