{"title":"采用大功率增强带宽技术的UTC-PD电路模型","authors":"Senjuti Khanra, A. Barman","doi":"10.1109/NUSOD.2014.6935371","DOIUrl":null,"url":null,"abstract":"An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Circuit model of UTC-PD with high power and enhanced bandwidth technique\",\"authors\":\"Senjuti Khanra, A. Barman\",\"doi\":\"10.1109/NUSOD.2014.6935371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"99 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Circuit model of UTC-PD with high power and enhanced bandwidth technique
An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.
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