射频通信用EF2类功率振荡器的设计

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS) Pub Date : 2013-12-01 DOI:10.1109/ICECS.2013.6815526

H. Madureira, N. Deltimple, E. Kerhervé, S. Haddad

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引用次数: 2

摘要

介绍了一种基于EF2类功率放大器的功率振荡器。EF2类功率放大器通过对开关的二次谐波进行短路，以降低其电压应力，并提供比E类功率放大器更正弦的功率波形。该电路采用标准ST微电子CMOS 130nm设计，能够在2V电源电压下提供20.6dBm RF功率，在2.5GHz下具有42%的DC-RF效率和12.5%的调谐范围。EF2类磁芯的漏极效率为49.4%。相位噪声低至-118.8dBc/Hz @ 1MHz。输出功率谱在基频和最强上谐波之间存在30.7dB的功率差。总使用面积1550um × 1280um。

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Design of a class EF2 power oscillator for RF communication application

A power oscillator based on a class EF2 power amplifier is presented. The class EF2 power amplifier uses a short circuit to the second harmonic across the switch to lower it's voltage stress and delivers a more sinusoidal power waveform than the class E counterpart. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20.6dBm RF power from a 2V supply voltage with a 42% DC-RF efficiency at 2.5GHz and present 12.5% tuning range. The drain efficiency of the class EF2 core is 49.4%. The phase noise is as low as -118.8dBc/Hz @ 1MHz. The output power spectrum presents 30.7dB power difference between the fundamental frequency and the strongest upper harmonic. The total used area is 1550um × 1280um.

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来源期刊

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)

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