一个x波段到ka波段的SPDT开关，使用200nm SiGe hbt

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160118

C. Poh, R. Schmid, J. Cressler, J. Papapolymerou

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引用次数: 22

摘要

本文介绍了一种x波段到ka波段SiGe HBT SPDT开关的设计和实测性能。该SPDT开关采用200 nm、150 GHz峰值fT硅锗(SiGe)异质结双极晶体管(HBT) BiCMOS技术制备。SPDT开关设计采用串联分流配置的二极管连接SiGe hbt，以提高开关带宽和隔离度。在8和40 GHz之间，该SPDT开关的插入损耗小于4.3 dB，隔离度大于20.3 dB，回波损耗大于9 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs

This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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