{"title":"基于0.35 μm SiGe BiCMOS技术的超宽带应用改进Cherry-Hooper放大器","authors":"M. Sokol, P. Galajda, S. Slovák, M. Pecovský","doi":"10.23919/IRS.2018.8447930","DOIUrl":null,"url":null,"abstract":"This paper describes a design of differential amplifier with modified Cherry-Hooper structure and emitter follower stages. The amplifier is designed for M-sequence UWB radar sensor applications and can be also utilized as a driver for specialized UWB coupled antenna. The circuit structure is designed and fabricated in 0.35 μm SiGe BiCMOS technology and has been designed for 13 GHz bandwidth with 15 dB single-ended gain. The amplifier structure consumes 450 mW from a −3.3 V supply. Parameters value of this amplifier were obtained from pre-layout and post-layout simulations.","PeriodicalId":436201,"journal":{"name":"2018 19th International Radar Symposium (IRS)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modified Cherry-Hooper Amplifier for UWB Applications in 0.35 μm SiGe BiCMOS Technology\",\"authors\":\"M. Sokol, P. Galajda, S. Slovák, M. Pecovský\",\"doi\":\"10.23919/IRS.2018.8447930\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a design of differential amplifier with modified Cherry-Hooper structure and emitter follower stages. The amplifier is designed for M-sequence UWB radar sensor applications and can be also utilized as a driver for specialized UWB coupled antenna. The circuit structure is designed and fabricated in 0.35 μm SiGe BiCMOS technology and has been designed for 13 GHz bandwidth with 15 dB single-ended gain. The amplifier structure consumes 450 mW from a −3.3 V supply. Parameters value of this amplifier were obtained from pre-layout and post-layout simulations.\",\"PeriodicalId\":436201,\"journal\":{\"name\":\"2018 19th International Radar Symposium (IRS)\",\"volume\":\"142 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 19th International Radar Symposium (IRS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IRS.2018.8447930\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 19th International Radar Symposium (IRS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IRS.2018.8447930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modified Cherry-Hooper Amplifier for UWB Applications in 0.35 μm SiGe BiCMOS Technology
This paper describes a design of differential amplifier with modified Cherry-Hooper structure and emitter follower stages. The amplifier is designed for M-sequence UWB radar sensor applications and can be also utilized as a driver for specialized UWB coupled antenna. The circuit structure is designed and fabricated in 0.35 μm SiGe BiCMOS technology and has been designed for 13 GHz bandwidth with 15 dB single-ended gain. The amplifier structure consumes 450 mW from a −3.3 V supply. Parameters value of this amplifier were obtained from pre-layout and post-layout simulations.
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