{"title":"基于二维电学和三维热模拟的4H-SiC射频功率器件晶格加热计算","authors":"K. Bertilsson, C. Harris, H. Nilsson","doi":"10.1109/ISDRS.2003.1272140","DOIUrl":null,"url":null,"abstract":"The paper presents the thermal effects of 4H-SiC RF power devices using simulation based on a combination of 2D device simulations for the electrical transport and 3D thermal simulation for the lattice heating. Using the combined device simulation model the feasibility for different kinds of layouts and the influence on the device performance for SiC RF power MESFET is presented.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calculation of lattice heating in 4H-SiC RF power devices, based on 2D electrical and 3D thermal simulations\",\"authors\":\"K. Bertilsson, C. Harris, H. Nilsson\",\"doi\":\"10.1109/ISDRS.2003.1272140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the thermal effects of 4H-SiC RF power devices using simulation based on a combination of 2D device simulations for the electrical transport and 3D thermal simulation for the lattice heating. Using the combined device simulation model the feasibility for different kinds of layouts and the influence on the device performance for SiC RF power MESFET is presented.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculation of lattice heating in 4H-SiC RF power devices, based on 2D electrical and 3D thermal simulations
The paper presents the thermal effects of 4H-SiC RF power devices using simulation based on a combination of 2D device simulations for the electrical transport and 3D thermal simulation for the lattice heating. Using the combined device simulation model the feasibility for different kinds of layouts and the influence on the device performance for SiC RF power MESFET is presented.
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