基于第一性原理计算的低接触电阻1nm NiSi/Si结设计

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346791

T. Yamauchi, A. Kinoshita, Y. Tsuchiya, J. Koga, K. Kato

{"title":"基于第一性原理计算的低接触电阻1nm NiSi/Si结设计","authors":"T. Yamauchi, A. Kinoshita, Y. Tsuchiya, J. Koga, K. Kato","doi":"10.1109/IEDM.2006.346791","DOIUrl":null,"url":null,"abstract":"This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance\",\"authors\":\"T. Yamauchi, A. Kinoshita, Y. Tsuchiya, J. Koga, K. Kato\",\"doi\":\"10.1109/IEDM.2006.346791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346791\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

本文基于第一性原理计算，研究了硅化镍(NiSi)/硅(Si)界面偶极子产生引起的肖特基势垒高度(SBH)调制效应。以B原子取代Si原子的情况下，偶极抚慰SBH在界面周围1nm区域显著降低到0.1 eV。结果表明，通过适当的掺杂制备，NiSi是一种可行的电极材料，最终用于小型p- mosfet

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1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance

This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs

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2006 International Electron Devices Meeting

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