{"title":"亚纳秒光电开关","authors":"L. Prudaev, M. Skakunov, O. Tolbanov","doi":"10.1109/SIBCON.2007.371332","DOIUrl":null,"url":null,"abstract":"New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.","PeriodicalId":131657,"journal":{"name":"2007 Siberian Conference on Control and Communications","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subnanosecond Optoelectronic Switch\",\"authors\":\"L. Prudaev, M. Skakunov, O. Tolbanov\",\"doi\":\"10.1109/SIBCON.2007.371332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.\",\"PeriodicalId\":131657,\"journal\":{\"name\":\"2007 Siberian Conference on Control and Communications\",\"volume\":\"2012 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2007.371332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2007.371332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.
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