0.9 V DSP模块:一个15 ns 4 K SRAM和一个45 ns 16位乘法/累加器

J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang
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引用次数: 20

摘要

在互补异质结构GaAs中设计并制作了4k SRAM和16位乘/累加DSP块。这两种电路都工作在1.5 V到0.9 V以下。SRAM在2.44 mm/sup /的面积上使用28,272个晶体管。细胞大小为278 /spl mu/m/sup 2/ 1.0 /spl mu/m栅长。测量结果表明,在1.5 V和0.9 V下的接入延迟分别为5.3 ns和15.0 ns。在0.9 V时,总功率为0.36 mW。CGaAs乘法器采用16位改进Booth架构,带有3路40位累加器。该倍增器在1.23 mm/sup /的面积上使用了11,200个晶体管。测量到的延迟在1.5 V时为19.0 ns,在0.9 V时为44.7 ns。在0.9 V时,总电流小于0.4 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator
4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.
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