J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang
{"title":"0.9 V DSP模块:一个15 ns 4 K SRAM和一个45 ns 16位乘法/累加器","authors":"J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang","doi":"10.1109/GAAS.1994.636918","DOIUrl":null,"url":null,"abstract":"4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator\",\"authors\":\"J. Hallmark, C. Shurboff, B. Ooms, R. Lucero, J. Abrokwah, Jenn‐Hwa Huang\",\"doi\":\"10.1109/GAAS.1994.636918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator
4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.