基于集成MEMS开关的可重构射频电路

J. DeNatale
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引用次数: 7

摘要

MEMS移相器基于可切换的无源元件,用于实现低插入损耗、宽带宽和紧凑芯片尺寸的各种电路。集成MEMS开关与有源GaAs pHEMT mmic实现可重构LNA和PA器件。一个4b真延时移相器在一个7mm /sup /的芯片上实现了/spl /1.2 dB的插入损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reconfigurable RF circuits based on integrated MEMS switches
MEMS phase shifters, based on switchable passive components, are used to achieve a variety of circuits with low insertion loss, wide bandwidth and compact die size. Integration of MEMS switches with active GaAs pHEMT MMICs achieves reconfigurable LNA and PA devices. A 4 b true time-delay phase-shifter achieves /spl les/1.2 dB insertion loss on a 7 mm/sup 2/ die.
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