基于片上单片机的双低功耗1/2 LSB NL 16b/1Msample/s SAR A/D转换器

2006 IEEE Asian Solid-State Circuits Conference Pub Date : 2006-11-01 DOI:10.1109/ASSCC.2006.357849

K. Leung, K. Leung, D. Holberg

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引用次数: 6

摘要

一种0.35 μ m双聚CMOS 16b SAR A/D转换器采用自校准技术获得frac12lsb INL。差分THD和单端THD在1Msample/s下分别为101dB和96db。每个ADC在3v时消耗20 mW，占用2.9 mm2的有效面积，产生0.9 pJ/b的FOM。该芯片包括3个adc、2个dac、8051微控制器、CAN控制器、DMA控制器、64k闪存和4k内存，占用26mm2。

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A Dual Low Power 1/2 LSB NL 16b/1Msample/s SAR A/D Converter with on-chip Microcontroller

A 0.35 mum double-poly CMOS 16 b SAR A/D converter uses self-calibration techniques to obtain frac12 LSB INL. The differential and single-ended THD at 1Msample/s are 101dB and 96 dB, respectively. Each ADC consumes 20 mW at 3 V and occupies 2.9 mm2 active area, resulting in a 0.9 pJ/b FOM. The chip includes 3 ADCs, 2 DACs, 8051-microcontroller, CAN controller, DMA controller, 64 K flash memory and 4 K RAM occupying 26 mm2.

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2006 IEEE Asian Solid-State Circuits Conference

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