在TaN金属栅极中加入Ta/sub 2/O/sub 5/，提高了HfO/sub 2/栅极介质的结晶温度和界面性能

International Semiconductor Device Research Symposium, 2003 Pub Date : 2004-03-15 DOI:10.1109/ISDRS.2003.1271996

Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, N. Wu, Hang Hu, M. F. Li, A. Chin, D. Chan, W. D. Wang, D. Kwong

{"title":"在TaN金属栅极中加入Ta/sub 2/O/sub 5/，提高了HfO/sub 2/栅极介质的结晶温度和界面性能","authors":"Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, N. Wu, Hang Hu, M. F. Li, A. Chin, D. Chan, W. D. Wang, D. Kwong","doi":"10.1109/ISDRS.2003.1271996","DOIUrl":null,"url":null,"abstract":"This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4603 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate\",\"authors\":\"Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, N. Wu, Hang Hu, M. F. Li, A. Chin, D. Chan, W. D. Wang, D. Kwong\",\"doi\":\"10.1109/ISDRS.2003.1271996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"4603 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1271996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1271996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文提出在HfO/sub /薄膜中加入高k值的Ta/sub / 2/O/sub / 5/，以提高其结晶温度和界面性能。本文报道了具有TaN金属栅极的(HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET。

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Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate

This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.

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International Semiconductor Device Research Symposium, 2003

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