紫外光共聚焦显微镜检测0.1 /spl μ m级缺陷的特点

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962990

Sang-mun Chon, S. Choi, Dong Chun Lee, C. Jun, Sung-gon Ryu, Sun Yong Choi

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引用次数: 0

摘要

由于设计规则的收缩，利用白光光源进行光学在线缺陷检测已接近其检测极限。为了克服这一限制，最近介绍了一种使用紫外共聚焦显微镜的缺陷检测系统。本文通过对缺陷检测系统捕获的TDI图像进行分析，研究了利用紫外光源进行共聚焦的紫外光共聚焦显微镜的特性。本研究结果表明，紫外光共聚焦显微镜对0.1 /spl mu/m级小缺陷的检测比白光光源或常规显微镜具有更高的灵敏度和效率。

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Characteristics of UV confocal microscopy inspection for detecting 0.1 /spl mu/m level defects

Due to shrinkage of design rule, optical in-line defect inspection with white-light source is reaching its detection limit. To overcome the limitation, a defect inspection system using UV confocal microscopy was recently introduced. In this paper, we investigated characteristics of UV confocal microscopy, which is confocal microscopy using UV light source, by analyzing TDI images captured by a defect inspection system with UV confocal microscopy. The results of this study showed that UV confocal microscopy has higher sensitivity and is more efficient for detection of 0.1 /spl mu/m-level small defects rather than white-light source or conventional microscopy.

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2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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