用非真空化学方法获得ZnO薄膜的结构和电物理性质

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912401

K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova

{"title":"用非真空化学方法获得ZnO薄膜的结构和电物理性质","authors":"K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova","doi":"10.1109/OMEE.2014.6912401","DOIUrl":null,"url":null,"abstract":"This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"2652 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electro-physical properties of ZnO films, obtained by nonvacuum chemical method\",\"authors\":\"K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova\",\"doi\":\"10.1109/OMEE.2014.6912401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.\",\"PeriodicalId\":142377,\"journal\":{\"name\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"volume\":\"2652 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2014.6912401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了以锌的乙酰丙酮酸盐为原料，在280 ~ 320℃的硅衬底上用MOCVD法制备的ZnO薄膜结构。采用x射线衍射、扫描电镜、光致发光显微镜和电流-电压法研究了ZnO薄膜的结构、发射和输运特性。在微分法和注入法的基础上，分析了电输运机理。所获得的ZnO/Si结构和ZnO薄膜具有良好的结构和电学性能，适合用于电子器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structural and electro-physical properties of ZnO films, obtained by nonvacuum chemical method

This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

自引率

0.00%

发文量