GaAs mesfet中表面相关深阱效应对栅极滞后现象的影响分析

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567844

K. Horio, T. Yamada

{"title":"GaAs mesfet中表面相关深阱效应对栅极滞后现象的影响分析","authors":"K. Horio, T. Yamada","doi":"10.1109/GAAS.1996.567844","DOIUrl":null,"url":null,"abstract":"Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs\",\"authors\":\"K. Horio, T. Yamada\",\"doi\":\"10.1109/GAAS.1996.567844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

通过二维仿真研究了表面态对GaAs mesfet中栅极滞后现象的影响。结果表明，深层类受体状态在决定其特性方面起主导作用。为了减少门滞后，深度受体应该被做成电子陷阱状。这可以通过降低表面态密度来实现。还描述了一些期望具有较小门滞后的器件结构。

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Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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