130-nm SiGe BiCMOS的w波段构造波振荡器

SoutheastCon 2017 Pub Date : 2017-03-01 DOI:10.1109/SECON.2017.7925356

Goker Ariyak, Monique Kirkman-Bey, N. Dogan, Zhijian Xie, M. Ketel

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引用次数: 2

摘要

本文设计并仿真了一种在130 nm SiGe BiCMOS上的确定性w波段构造波振荡器(CWO)。六段CWO产生95 GHz多相振荡信号，沿环分布60度相位。CWO电路的总面积为0.59 mm × 0.53 mm，在2V电源下功耗为67 mW。工作频率为95 GHz的六相CWO对50欧姆负载的输出功率为- 10 dBm，偏移量为1mhz时相位噪声为- 81 dBc / Hz。

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A W-band constructive wave oscillator in 130-nm SiGe BiCMOS

In this paper we present a deterministic W-band constructive-wave oscillator (CWO) designed and simulated in 130-nm SiGe BiCMOS. A six-section CWO produces 95 GHz multi-phase oscillation signals that are distributed along the ring with 60 degree phases. The CWO circuit occupies a total area of 0.59 mm × 0.53 mm and dissipates 67 mW from a 2V supply. The six-phase CWO operating at 95 GHz has −10 dBm output power into 50 ohm load with a phase noise of −81 dBc per Hz at 1 MHz offset.

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SoutheastCon 2017

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