{"title":"发射极开关晶闸管的SPICE建模","authors":"W. Wong, M. S. Shekar","doi":"10.1109/SOUTHC.1994.498113","DOIUrl":null,"url":null,"abstract":"A SPICE model for the MOS-gated Emitter Switched Thyristor (EST) structure is developed for the first time. This static model is based on analytical models developed through two-dimensional numerical simulations using PISCES. Using this model the complete static characteristics of the EST, including the IGBT region of operation can be described. The EST model implemented in SPICE shows good agreement between the model and measurements (600 V EST) for the forward voltage drop and the main thyristor latching current density as a function of the gate bias.","PeriodicalId":164672,"journal":{"name":"Conference Record Southcon","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SPICE modeling of the emitter switched thyristor\",\"authors\":\"W. Wong, M. S. Shekar\",\"doi\":\"10.1109/SOUTHC.1994.498113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A SPICE model for the MOS-gated Emitter Switched Thyristor (EST) structure is developed for the first time. This static model is based on analytical models developed through two-dimensional numerical simulations using PISCES. Using this model the complete static characteristics of the EST, including the IGBT region of operation can be described. The EST model implemented in SPICE shows good agreement between the model and measurements (600 V EST) for the forward voltage drop and the main thyristor latching current density as a function of the gate bias.\",\"PeriodicalId\":164672,\"journal\":{\"name\":\"Conference Record Southcon\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record Southcon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1994.498113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record Southcon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1994.498113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
首次建立了mos门控发射极开关晶闸管(EST)结构的SPICE模型。这个静态模型是基于使用双鱼座进行二维数值模拟开发的分析模型。利用该模型可以描述EST的完整静态特性，包括IGBT运行区域。在SPICE中实现的EST模型显示，模型与测量值(600 V EST)之间的正向压降和主晶闸管锁存电流密度作为栅极偏置的函数具有良好的一致性。
A SPICE model for the MOS-gated Emitter Switched Thyristor (EST) structure is developed for the first time. This static model is based on analytical models developed through two-dimensional numerical simulations using PISCES. Using this model the complete static characteristics of the EST, including the IGBT region of operation can be described. The EST model implemented in SPICE shows good agreement between the model and measurements (600 V EST) for the forward voltage drop and the main thyristor latching current density as a function of the gate bias.
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