湿氧化AlGaAs vs. AlAs:少量镓是好的

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-12-01 DOI:10.1109/LEOS.1996.565297

K. Choquette, K. Geib, R. Hull, H. Hou, K. Lear, H. Chui, B. E. Hammons, J. Nevers

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引用次数: 2

摘要

综上所述，湿氧化AlGaAs合金形成的埋藏氧化物在氧化各向同性、机械稳定性和应变方面优于AlAs。与使用AlAs层的vcsel相比，使用AlGaAs氧化物层作为电流孔的vcsel显示出有希望的可靠性，这并不奇怪。将比较具有不同氧化层的vcsel的寿命数据。由AlGaAs合金转化而成的氧化物的有利性质为可靠的vcsel提供了稳健的器件加工，并可能在其他先进的光电器件中发挥重要作用。

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Wet oxidation of AlGaAs vs. AlAs: A little gallium is good

In summary, buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that VCSELs using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers will be presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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