Effect of III-Nitride polarization on photo-current in N-polar GaN/InGaN p-n

This paper studies the impact of III-Nitride polarization on p-GaN/n-InGaN devices grown with N-polar orientations in photovoltaic properties. A new model taking account of the spontaneous and piezoelectric polarizations in the photocurrent density is developed. The self-consistent model as well is used to determine the energy band conduction. Using these models, we have computed a set of photovoltaic parameters allowing the evaluation of photovoltaic performance. Calculations were made as a function of indium composition and the host lattice temperature. As far as the effect of polarization is concerned, this discovery allows the manufacturing of high efficiency solar cells based on nitrides.