{"title":"GaAs基氧化物约束In(Ga)As/GaAs量子点垂直腔面发射二极管激光器的性能特征","authors":"L. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski","doi":"10.1109/ICTON.2008.4598618","DOIUrl":null,"url":null,"abstract":"The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.","PeriodicalId":230802,"journal":{"name":"2008 10th Anniversary International Conference on Transparent Optical Networks","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance characteristics of GaAs-based oxide-confined In(Ga)As/GaAs quantum-dot vertical-cavity surface-emitting diode lasers\",\"authors\":\"L. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski\",\"doi\":\"10.1109/ICTON.2008.4598618\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.\",\"PeriodicalId\":230802,\"journal\":{\"name\":\"2008 10th Anniversary International Conference on Transparent Optical Networks\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 10th Anniversary International Conference on Transparent Optical Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2008.4598618\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 10th Anniversary International Conference on Transparent Optical Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2008.4598618","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
用自洽模型模拟了1.3 μ m GaAs基量子点(QD) In(Ga)As/GaAs激光器的工作。讨论了量子点密度和均匀性对激光工作特性的影响。比较了氧化约束(OC)和质子注入(PI)两种vcsel的性能，并分析了它们的最佳结构。在室温下，PI vcsel的激光阈值比OC vcsel的低，但在更高的温度下，这种关系就反过来了。
The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.
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