{"title":"热稳定50gb /s SOI DPSK解调器","authors":"M. S. Hai, O. Liboiron-Ladouceur","doi":"10.1109/PHO.2011.6110565","DOIUrl":null,"url":null,"abstract":"A fabricated 50 Gb/s silicon-on-insulator (SOI) Mach-Zehnder demodulator exhibits over 90 % improvement in thermal stability with 0.05 nm/°C of its spectral profile compared to 0.9 nm/°C for a non-compensated demodulators.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Thermally stable 50 Gb/s SOI DPSK demodulator\",\"authors\":\"M. S. Hai, O. Liboiron-Ladouceur\",\"doi\":\"10.1109/PHO.2011.6110565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fabricated 50 Gb/s silicon-on-insulator (SOI) Mach-Zehnder demodulator exhibits over 90 % improvement in thermal stability with 0.05 nm/°C of its spectral profile compared to 0.9 nm/°C for a non-compensated demodulators.\",\"PeriodicalId\":173679,\"journal\":{\"name\":\"IEEE Photonic Society 24th Annual Meeting\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonic Society 24th Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHO.2011.6110565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fabricated 50 Gb/s silicon-on-insulator (SOI) Mach-Zehnder demodulator exhibits over 90 % improvement in thermal stability with 0.05 nm/°C of its spectral profile compared to 0.9 nm/°C for a non-compensated demodulators.
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