H. Sherry, R. Al Hadi, J. Grzyb, E. Ojefors, A. Cathelin, A. Kaiser, U. Pfeiffer
{"title":"采用65nm CMOS技术的透镜集成太赫兹成像阵列","authors":"H. Sherry, R. Al Hadi, J. Grzyb, E. Ojefors, A. Cathelin, A. Kaiser, U. Pfeiffer","doi":"10.1109/RFIC.2011.5940670","DOIUrl":null,"url":null,"abstract":"THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√Hz is measured for SOI detectors with the lens. THz Images are presented.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"74","resultStr":"{\"title\":\"Lens-integrated THz imaging arrays in 65nm CMOS technologies\",\"authors\":\"H. Sherry, R. Al Hadi, J. Grzyb, E. Ojefors, A. Cathelin, A. Kaiser, U. Pfeiffer\",\"doi\":\"10.1109/RFIC.2011.5940670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√Hz is measured for SOI detectors with the lens. THz Images are presented.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"74\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lens-integrated THz imaging arrays in 65nm CMOS technologies
THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√Hz is measured for SOI detectors with the lens. THz Images are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
