EBL双步曝光法制作蘑菇样型材的发展问题

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998645

K. Indykiewicz, B. Paszkiewicz, T. Szymański, R. Paszkiewicz

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引用次数: 0

摘要

本文提出了抗阻叠加中发展对最终结构分辨率影响的简单估计方法。指出了电子束光刻显影过程分析的重要性。提出的问题是电子束对电阻影响的蒙特卡罗模拟的增强，以及在光刻工艺设计中应使用的耦合计算。进行的分析与进行的实验得到了很好的证实。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development issue in mushroom-like profile fabrication in EBL double step exposure method

In the paper simple estimation method of development influence on final structures resolution in resist stack is proposed. The importance of analysis of development process in electron beam lithography is shown. Presented issues are enhancements of Monte Carlo simulations of e-beam influence on resists and as coupled calculations should be used in lithography process design. Performed analysis found good confirmations with conducted experiments.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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