{"title":"基于折叠级联码的低温JFET运放,其高静态区域对称性决定了失调电压的系统组成","authors":"V. Chumakov, A. Bugakova, A. Titov","doi":"10.1109/SIBCON56144.2022.10002991","DOIUrl":null,"url":null,"abstract":"The original architecture of operational amplifiers (OpAmps) implemented on complementary JFETs or depletion-mode complementary MOS is considered. The feature of the proposed OpAmps is differential input stage and folded-cascode special designs, which have a high symmetry of the FETs static regime from terms of gate-to-drain voltages. Computer-based simulations of the OpAmp in the LTspice-XVII was conducted between -197 and 27 degrees Celsius. The proposed circuit solutions reduce the systematic constituent of the offset-voltage (up to 10 $\\mu \\mathrm{V}$) and increase voltage gain (up to 87 dB) of the open-loop OpAmp. The explored OpAmps are recommended by the authors of the article for analogue, including low-noise, and analogue-to-digital devices, for example, active filters, comparators, actuators, and others, which are used in systems of communication and management, such as at cryogenic temperatures, and/or under radiation conditions.","PeriodicalId":265523,"journal":{"name":"2022 International Siberian Conference on Control and Communications (SIBCON)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Temperature JFET OpAmp Based On a Folded-Cascode with High Static Regime Symmetry of Transistors That Determine the Systematic Constituent of the Offset-Voltage\",\"authors\":\"V. Chumakov, A. Bugakova, A. Titov\",\"doi\":\"10.1109/SIBCON56144.2022.10002991\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The original architecture of operational amplifiers (OpAmps) implemented on complementary JFETs or depletion-mode complementary MOS is considered. The feature of the proposed OpAmps is differential input stage and folded-cascode special designs, which have a high symmetry of the FETs static regime from terms of gate-to-drain voltages. Computer-based simulations of the OpAmp in the LTspice-XVII was conducted between -197 and 27 degrees Celsius. The proposed circuit solutions reduce the systematic constituent of the offset-voltage (up to 10 $\\\\mu \\\\mathrm{V}$) and increase voltage gain (up to 87 dB) of the open-loop OpAmp. The explored OpAmps are recommended by the authors of the article for analogue, including low-noise, and analogue-to-digital devices, for example, active filters, comparators, actuators, and others, which are used in systems of communication and management, such as at cryogenic temperatures, and/or under radiation conditions.\",\"PeriodicalId\":265523,\"journal\":{\"name\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON56144.2022.10002991\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON56144.2022.10002991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-Temperature JFET OpAmp Based On a Folded-Cascode with High Static Regime Symmetry of Transistors That Determine the Systematic Constituent of the Offset-Voltage
The original architecture of operational amplifiers (OpAmps) implemented on complementary JFETs or depletion-mode complementary MOS is considered. The feature of the proposed OpAmps is differential input stage and folded-cascode special designs, which have a high symmetry of the FETs static regime from terms of gate-to-drain voltages. Computer-based simulations of the OpAmp in the LTspice-XVII was conducted between -197 and 27 degrees Celsius. The proposed circuit solutions reduce the systematic constituent of the offset-voltage (up to 10 $\mu \mathrm{V}$) and increase voltage gain (up to 87 dB) of the open-loop OpAmp. The explored OpAmps are recommended by the authors of the article for analogue, including low-noise, and analogue-to-digital devices, for example, active filters, comparators, actuators, and others, which are used in systems of communication and management, such as at cryogenic temperatures, and/or under radiation conditions.