基于折叠级联码的低温JFET运放,其高静态区域对称性决定了失调电压的系统组成

V. Chumakov, A. Bugakova, A. Titov
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引用次数: 0

摘要

考虑了在互补jfet或耗尽模式互补MOS上实现运算放大器(OpAmps)的原始架构。所提出的运放的特点是差分输入级和折叠级串的特殊设计,从栅极到漏极电压的角度来看,它们具有高度对称的fet静态状态。LTspice-XVII中OpAmp的计算机模拟在-197到27摄氏度之间进行。所提出的电路解决方案降低了偏置电压的系统组成(高达10 $\mu \ maththrm {V}$)并增加了开环OpAmp的电压增益(高达87 dB)。本文的作者建议将探索的opamp用于模拟,包括低噪声和模数设备,例如有源滤波器,比较器,致动器等,用于通信和管理系统,例如低温和/或辐射条件下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Temperature JFET OpAmp Based On a Folded-Cascode with High Static Regime Symmetry of Transistors That Determine the Systematic Constituent of the Offset-Voltage
The original architecture of operational amplifiers (OpAmps) implemented on complementary JFETs or depletion-mode complementary MOS is considered. The feature of the proposed OpAmps is differential input stage and folded-cascode special designs, which have a high symmetry of the FETs static regime from terms of gate-to-drain voltages. Computer-based simulations of the OpAmp in the LTspice-XVII was conducted between -197 and 27 degrees Celsius. The proposed circuit solutions reduce the systematic constituent of the offset-voltage (up to 10 $\mu \mathrm{V}$) and increase voltage gain (up to 87 dB) of the open-loop OpAmp. The explored OpAmps are recommended by the authors of the article for analogue, including low-noise, and analogue-to-digital devices, for example, active filters, comparators, actuators, and others, which are used in systems of communication and management, such as at cryogenic temperatures, and/or under radiation conditions.
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