直流和脉冲偏压下氧化锌压敏电阻的电导率

Guangyong Xie, Meng-chyi Wu, Songnan Chen
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引用次数: 0

摘要

氧化锌(ZnO)压敏电阻器具有良好的非线性、响应时间快、功耗低等优点,广泛应用于各种电路的过压保护中。选择了商用氧化锌压敏电阻,测试了其直流电导率和脉冲电导率。基于ZnO晶界势垒模型,分析了ZnO击穿区和预击穿区的直流电导率。在脉冲偏置下,得到了ZnO压敏电阻的电容电流和导通电流。传导电流的增长比电容电流的增长大。计算了ZnO晶界势垒的隧穿电场系数、晶界介电常数和晶界厚度的比例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conductivity of Bulk Zinc Oxide Varistors under Dc and Pulsed Bias
Zinc oxide (ZnO) varistors is widely used in over voltage protection of various circuits for its advantages of excellent nonlinear, fast response time and low power consumption. Commercial ZnO varistors was selected and its dc and pulse conductivity was tested. Based on ZnO grain boundary barrier model, the dc conductivity was analyzed in the Breakdown and Pre-breakdown regions. At the pulsed bias, the capacitive current and conduction current of ZnO varistors was obtained. The growth ratio of conduction current is greater than that of the capacitive current. The tunneling electric field coefficient of ZnO grain boundary barrier, the permittivity of boundary and the proportion of boundary thickness were calculated.
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