纳米CMOS中抗退化模拟电路的设计工具和电路解决方案

G. Gielen
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引用次数: 0

摘要

随着CMOS技术在纳米范围内的先进缩放,可以设计出高度集成的混合信号系统。然而,纳米CMOS的使用带来了许多挑战。本主题演讲概述了由于可变性和可靠性增加而引起的问题。设计人员必须在IC设计时或在IC运行时通过重新配置来解决这两个问题。描述了有效分析和识别模拟电路可靠性问题的设计工具。此外,还提出了允许电路从退化故障中恢复的运行时电路自适应技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design tools and circuit solutions for degradation-resilient analog circuits in nanometer CMOS
With the advanced scaling of CMOS technology in the nanometer range, highly integrated mixed-signal systems can be designed. The use of nanometer CMOS, however, poses many challenges. This keynote presentation gives an overview of problems due to increased variability and reliability. Both have to be addressed by the designer, either at IC design time or through reconfiguration at IC run time. Design tools for the efficient analysis and identification of reliability problems in analog circuits is described. Also, run-time circuit adaptation techniques are presented that allow a circuit to recover from degradation failures.
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