等离子体诱导n-InP陷阱的表征

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328191

Y. Sakamoto, H. Ninomiya, K. Matsuda, T. Sugino, J. Shirafuji

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引用次数: 0

摘要

用等温电容瞬态光谱(ICTS)测量方法研究了远距氢和氦等离子体处理的n-InP中的深电子阱能级。两种等离子体处理均可诱导E/sub c/-0.51 eV (E2)和E/sub c/-0.54 eV (E4)的阱能级。然而，E4陷阱与磷空位有关，并且在H/sub /等离子体处理的样品中完全钝化。等离子体处理后的样品经350℃退火后，发现E4陷阱的存在。研究发现，随着He离子加速电压的增加，E2陷阱的主要引入区宽度变厚。

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Characterization of plasma-induced traps in n-InP

Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E/sub c/-0.51 eV (E2) and E/sub c/-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H/sub 2/ plasma treated sample. The existence of the E4 traps in H/sub 2/-plasma-treated sample can be revealed after 350/spl deg/C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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