{"title":"使用EMTP的高级半导体建模","authors":"Samihoeto, J.A. Martinez Velasco, G. Capolino","doi":"10.1109/CIPE.1994.396695","DOIUrl":null,"url":null,"abstract":"Advanced models of two semiconductor devices, the diode and IGBT, have been developed using a general purpose program, the Electromagnetic Transients Program (EMTP). These models are based on semiconductor physics and reproduce with high accuracy their behaviour during switching phenomena. The aim of this paper is to present a short summary of EMTP capabilities and detail the approach used for the development of advanced semiconductor models. Simulation results show the effectiveness of the representation developed in this work.<<ETX>>","PeriodicalId":123138,"journal":{"name":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced semiconductor modeling using the EMTP\",\"authors\":\"Samihoeto, J.A. Martinez Velasco, G. Capolino\",\"doi\":\"10.1109/CIPE.1994.396695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced models of two semiconductor devices, the diode and IGBT, have been developed using a general purpose program, the Electromagnetic Transients Program (EMTP). These models are based on semiconductor physics and reproduce with high accuracy their behaviour during switching phenomena. The aim of this paper is to present a short summary of EMTP capabilities and detail the approach used for the development of advanced semiconductor models. Simulation results show the effectiveness of the representation developed in this work.<<ETX>>\",\"PeriodicalId\":123138,\"journal\":{\"name\":\"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIPE.1994.396695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1994.396695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced models of two semiconductor devices, the diode and IGBT, have been developed using a general purpose program, the Electromagnetic Transients Program (EMTP). These models are based on semiconductor physics and reproduce with high accuracy their behaviour during switching phenomena. The aim of this paper is to present a short summary of EMTP capabilities and detail the approach used for the development of advanced semiconductor models. Simulation results show the effectiveness of the representation developed in this work.<>
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