{"title":"新兴SiGeSn集成光子技术","authors":"R. Soref","doi":"10.1109/PHOSST.2016.7548747","DOIUrl":null,"url":null,"abstract":"The 1.5 to 5.0 μm wavelength region is a “new band” for sensing, communications, night vision and other significant applications enabled by emerging SiGeSn integrated-photonics technology. This paper gives an overview of potential mid-infrared applications and device capabilities. After R&D, it is likely that all photonic components including on-chip laser diodes, photodetectors, electro-modulators and switches can be constructed as SiGeSn-A/SiGeSn-B heterostructures, such as quantum-well devices. Particularly in the 1.9 to 2.5 μm wavelength range where 300K operation of an all-group-IV photonic integrated circuit (PIC) can be engineered, this silicon-based PIC is a prime candidate for insertion into a high-volume CMOS or BiCMOS foundry manufacturing process, thereby yielding low-cost OEICs.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Emerging SiGeSn integrated-photonics technology\",\"authors\":\"R. Soref\",\"doi\":\"10.1109/PHOSST.2016.7548747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 1.5 to 5.0 μm wavelength region is a “new band” for sensing, communications, night vision and other significant applications enabled by emerging SiGeSn integrated-photonics technology. This paper gives an overview of potential mid-infrared applications and device capabilities. After R&D, it is likely that all photonic components including on-chip laser diodes, photodetectors, electro-modulators and switches can be constructed as SiGeSn-A/SiGeSn-B heterostructures, such as quantum-well devices. Particularly in the 1.9 to 2.5 μm wavelength range where 300K operation of an all-group-IV photonic integrated circuit (PIC) can be engineered, this silicon-based PIC is a prime candidate for insertion into a high-volume CMOS or BiCMOS foundry manufacturing process, thereby yielding low-cost OEICs.\",\"PeriodicalId\":337671,\"journal\":{\"name\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHOSST.2016.7548747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2016.7548747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The 1.5 to 5.0 μm wavelength region is a “new band” for sensing, communications, night vision and other significant applications enabled by emerging SiGeSn integrated-photonics technology. This paper gives an overview of potential mid-infrared applications and device capabilities. After R&D, it is likely that all photonic components including on-chip laser diodes, photodetectors, electro-modulators and switches can be constructed as SiGeSn-A/SiGeSn-B heterostructures, such as quantum-well devices. Particularly in the 1.9 to 2.5 μm wavelength range where 300K operation of an all-group-IV photonic integrated circuit (PIC) can be engineered, this silicon-based PIC is a prime candidate for insertion into a high-volume CMOS or BiCMOS foundry manufacturing process, thereby yielding low-cost OEICs.
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