{"title":"基于45nm SOI技术的32ghz宽带毫米波功率放大器","authors":"Cheng Zhang, Guanqin Guo, Wenlong He, Xi Zhu","doi":"10.1109/ucmmt53364.2021.9569923","DOIUrl":null,"url":null,"abstract":"This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.","PeriodicalId":117712,"journal":{"name":"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology\",\"authors\":\"Cheng Zhang, Guanqin Guo, Wenlong He, Xi Zhu\",\"doi\":\"10.1109/ucmmt53364.2021.9569923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.\",\"PeriodicalId\":117712,\"journal\":{\"name\":\"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ucmmt53364.2021.9569923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ucmmt53364.2021.9569923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology
This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.
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