纳米晶丝网印刷CdS厚膜的合成与表征

B. Bagul, P. Sonawane, S. R. Gosavi
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引用次数: 0

摘要

介绍了采用丝网印刷法制备的CdS厚膜的结构、光学和电学性能。为了制备CdS厚膜,分别以醋酸镉和硫化钠为Cd源和S源,采用化学沉淀法制备了CdS纳米颗粒粉末。XRD谱图证实,烧结后的CdS厚膜形成了纯六方CdS相,晶粒尺寸约为29.12 nm。用JASCO V-630分光光度计记录了烧结cd厚膜在200 ~ 900 nm波长范围内的透射光谱,确定了烧结cd厚膜的能带隙为2.30 eV。电学研究表明,所制备的薄膜具有半导体性能。观察到,在室温下,厚膜的电阻率值为2.65 × 10 Ώcm,活化能约为0.14 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and Characterization of Nanocrystalline Screen-Printed CdS Thick Films
This paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 29.12 nm for sintered CdS thick films. The transmittance spectra of sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 200-900 nm from which energy band gap has been determined and is found to be 2.30 eV for sintered CdS thick film. Electrical studies showed that the semiconducting behavior of the prepared films. It has been observed that at room temperature electrical resistivity value of the thick film are 2.65 x 10 Ώcm and value of activation energy comes out about 0.14 eV.
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