{"title":"纳米晶丝网印刷CdS厚膜的合成与表征","authors":"B. Bagul, P. Sonawane, S. R. Gosavi","doi":"10.29055/jpaip/326","DOIUrl":null,"url":null,"abstract":"This paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 29.12 nm for sintered CdS thick films. The transmittance spectra of sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 200-900 nm from which energy band gap has been determined and is found to be 2.30 eV for sintered CdS thick film. Electrical studies showed that the semiconducting behavior of the prepared films. It has been observed that at room temperature electrical resistivity value of the thick film are 2.65 x 10 Ώcm and value of activation energy comes out about 0.14 eV.","PeriodicalId":101818,"journal":{"name":"Journal of Pure Applied and Industrial Physics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and Characterization of Nanocrystalline\\nScreen-Printed CdS Thick Films\",\"authors\":\"B. Bagul, P. Sonawane, S. R. Gosavi\",\"doi\":\"10.29055/jpaip/326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 29.12 nm for sintered CdS thick films. The transmittance spectra of sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 200-900 nm from which energy band gap has been determined and is found to be 2.30 eV for sintered CdS thick film. Electrical studies showed that the semiconducting behavior of the prepared films. It has been observed that at room temperature electrical resistivity value of the thick film are 2.65 x 10 Ώcm and value of activation energy comes out about 0.14 eV.\",\"PeriodicalId\":101818,\"journal\":{\"name\":\"Journal of Pure Applied and Industrial Physics\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Pure Applied and Industrial Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29055/jpaip/326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Pure Applied and Industrial Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29055/jpaip/326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis and Characterization of Nanocrystalline
Screen-Printed CdS Thick Films
This paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 29.12 nm for sintered CdS thick films. The transmittance spectra of sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 200-900 nm from which energy band gap has been determined and is found to be 2.30 eV for sintered CdS thick film. Electrical studies showed that the semiconducting behavior of the prepared films. It has been observed that at room temperature electrical resistivity value of the thick film are 2.65 x 10 Ώcm and value of activation energy comes out about 0.14 eV.